Fabrication of p-Channel Amorphous Tin Oxide Thin-Film Transistors Using a Thermal Evaporation Process
DC Field | Value | Language |
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dc.contributor.author | Lee, Ho-Nyeon | - |
dc.contributor.author | Song, Byeong-Jun | - |
dc.contributor.author | Park, Jae Chul | - |
dc.date.accessioned | 2021-08-11T22:47:20Z | - |
dc.date.available | 2021-08-11T22:47:20Z | - |
dc.date.issued | 2014-04 | - |
dc.identifier.issn | 1551-319X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/12296 | - |
dc.description.abstract | In this study, p-channel amorphous tin oxide thin-film transistors (TFTs) were fabricated. A vacuum thermal evaporation method with an SnO powder source was used to deposit the tin-oxide active layer. Thermal annealing in N-2 and oxygen plasma treatment were used as post-deposition treatments to obtain p-channel switching capabilities from the tin-oxide active layer. We have achieved a field effect mobility of 5.59 cm(2)V(-1)s(-1) with these TFTs. With their high mobility and low-cost fabrication process that is applicable to large-sized devices, they represent an advance toward practical oxide semiconductor technology. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Fabrication of p-Channel Amorphous Tin Oxide Thin-Film Transistors Using a Thermal Evaporation Process | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/JDT.2014.2298862 | - |
dc.identifier.scopusid | 2-s2.0-84897545603 | - |
dc.identifier.wosid | 000334505500002 | - |
dc.identifier.bibliographicCitation | IEEE/OSA Journal of Display Technology, v.10, no.4, pp 288 - 292 | - |
dc.citation.title | IEEE/OSA Journal of Display Technology | - |
dc.citation.volume | 10 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 288 | - |
dc.citation.endPage | 292 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURES | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordAuthor | Thin-film transistors (TFTs) | - |
dc.subject.keywordAuthor | semiconductor device fabrication | - |
dc.subject.keywordAuthor | tin compounds | - |
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