Fabrication of p-Channel Amorphous Tin Oxide Thin-Film Transistors Using a Thermal Evaporation Process
- Authors
- Lee, Ho-Nyeon; Song, Byeong-Jun; Park, Jae Chul
- Issue Date
- Apr-2014
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Thin-film transistors (TFTs); semiconductor device fabrication; tin compounds
- Citation
- IEEE/OSA Journal of Display Technology, v.10, no.4, pp 288 - 292
- Pages
- 5
- Journal Title
- IEEE/OSA Journal of Display Technology
- Volume
- 10
- Number
- 4
- Start Page
- 288
- End Page
- 292
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/12296
- DOI
- 10.1109/JDT.2014.2298862
- ISSN
- 1551-319X
- Abstract
- In this study, p-channel amorphous tin oxide thin-film transistors (TFTs) were fabricated. A vacuum thermal evaporation method with an SnO powder source was used to deposit the tin-oxide active layer. Thermal annealing in N-2 and oxygen plasma treatment were used as post-deposition treatments to obtain p-channel switching capabilities from the tin-oxide active layer. We have achieved a field effect mobility of 5.59 cm(2)V(-1)s(-1) with these TFTs. With their high mobility and low-cost fabrication process that is applicable to large-sized devices, they represent an advance toward practical oxide semiconductor technology.
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Collections - College of Engineering > Department of Display and Electronic Information Engineering > 1. Journal Articles
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