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Fabrication of p-Channel Amorphous Tin Oxide Thin-Film Transistors Using a Thermal Evaporation Process

Authors
Lee, Ho-NyeonSong, Byeong-JunPark, Jae Chul
Issue Date
Apr-2014
Publisher
Institute of Electrical and Electronics Engineers
Keywords
Thin-film transistors (TFTs); semiconductor device fabrication; tin compounds
Citation
IEEE/OSA Journal of Display Technology, v.10, no.4, pp 288 - 292
Pages
5
Journal Title
IEEE/OSA Journal of Display Technology
Volume
10
Number
4
Start Page
288
End Page
292
URI
https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/12296
DOI
10.1109/JDT.2014.2298862
ISSN
1551-319X
Abstract
In this study, p-channel amorphous tin oxide thin-film transistors (TFTs) were fabricated. A vacuum thermal evaporation method with an SnO powder source was used to deposit the tin-oxide active layer. Thermal annealing in N-2 and oxygen plasma treatment were used as post-deposition treatments to obtain p-channel switching capabilities from the tin-oxide active layer. We have achieved a field effect mobility of 5.59 cm(2)V(-1)s(-1) with these TFTs. With their high mobility and low-cost fabrication process that is applicable to large-sized devices, they represent an advance toward practical oxide semiconductor technology.
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