The dependence of QD-LED properties on the RF-sputtering and plasma treatment conditions of the electron-transporting layer
- Authors
- Kim, Dong-Jin; Lee, Ho-Nyeon
- Issue Date
- 2017
- Publisher
- Taylor & Francis
- Keywords
- Electron-transporting layer; quantum-dot light-emitting diode; sputtering; transparent metal oxide
- Citation
- Molecular Crystals and Liquid Crystals, v.651, no.1, pp 155 - 162
- Pages
- 8
- Journal Title
- Molecular Crystals and Liquid Crystals
- Volume
- 651
- Number
- 1
- Start Page
- 155
- End Page
- 162
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/8413
- DOI
- 10.1080/15421406.2017.1338075
- ISSN
- 1542-1406
1543-5318
- Abstract
- Quantum-dot light-emitting diodes (QD-LEDs) having a sputtered transparent metal oxide (TMO) electron-transporting layer (ETL) are studied. SnO2 and ZnO were examined as a candidate of the ETL considering their electronic bands. A relation between the exponent value, m, of the power law shaped current density curves and the luminance performance is found. The larger m value caused the higher luminance performance, and the m value could be controlled by changing the ETL deposition and treatment conditions. The highest luminance performance in this work was obtained from the QD-LEDs with the ZnO ETLs sputtered with an Ar/O-2 mixed sputtering gas and treated with an O-2 plasma. We find a method to control the defect density in TMO ETLs by changing the ETL deposition and surface-treatment conditions, the relation between the current curve shape and the luminance performance, and, as a result, an way to improve the luminance performance of QD-LEDs having a sputtered TMO ETL.
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Collections - College of Engineering > Department of Display and Electronic Information Engineering > 1. Journal Articles
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