Fabrication of thin film transistors having reactive thermal evaporated and transferred MoS2 active layers

Abstract

Two-dimensional semiconducting MoS2 films were fabricated by a reactive thermal evaporation method using MoO3 and S powder sources. Two-dimensional quantum structure was confirmed by the observation of the direct transition and van Hove singularity in the optical absorbance curve. Semiconducting 2-H phase was confirmed by the x-ray photoelectron spectroscopy analysis. The MoS2 thin-film transistor (TFT) with a SiO2 gate insulator was fabricated using the MoS2 film transfer process from the sapphire wafer onto the oxidized Si wafer. The fabricated MoS2 TFT had 33.7-V threshold voltage, 0.46-cm(2)V(-1)s(-1) field-effect mobility, 3.8-V/dec subthreshold swing, and 10(4) switching ratio.