Fabrication of thin film transistors having reactive thermal evaporated and transferred MoS2 active layers
- Authors
- Park, Tae-Kwang; Lee, Ho-Nyeon
- Issue Date
- 2017
- Publisher
- Taylor & Francis
- Keywords
- MoS2; reactive thermal evaporation; two-dimensional; thin-film transistor
- Citation
- Molecular Crystals and Liquid Crystals, v.651, no.1, pp 215 - 220
- Pages
- 6
- Journal Title
- Molecular Crystals and Liquid Crystals
- Volume
- 651
- Number
- 1
- Start Page
- 215
- End Page
- 220
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/8416
- DOI
- 10.1080/15421406.2017.1338099
- ISSN
- 1542-1406
1543-5318
- Abstract
- Two-dimensional semiconducting MoS2 films were fabricated by a reactive thermal evaporation method using MoO3 and S powder sources. Two-dimensional quantum structure was confirmed by the observation of the direct transition and van Hove singularity in the optical absorbance curve. Semiconducting 2-H phase was confirmed by the x-ray photoelectron spectroscopy analysis. The MoS2 thin-film transistor (TFT) with a SiO2 gate insulator was fabricated using the MoS2 film transfer process from the sapphire wafer onto the oxidized Si wafer. The fabricated MoS2 TFT had 33.7-V threshold voltage, 0.46-cm(2)V(-1)s(-1) field-effect mobility, 3.8-V/dec subthreshold swing, and 10(4) switching ratio.
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Collections - College of Engineering > Department of Display and Electronic Information Engineering > 1. Journal Articles
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