Characteristics of two-dimensional MoS2 films deposited using a reactive thermal evaporation method
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Tae-Kwang | - |
dc.contributor.author | Lee, Ho-Nyeon | - |
dc.date.accessioned | 2021-08-11T16:24:28Z | - |
dc.date.available | 2021-08-11T16:24:28Z | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 1542-1406 | - |
dc.identifier.issn | 1543-5318 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/8442 | - |
dc.description.abstract | In this study, we fabricated three- and four-molecule-thick two-dimensional (2-D) MoS2 films using a reactive thermal evaporation method. The number of layers was estimated using optical transmittance. The MoS2 films had a 1.89-eV direct band gap and 1.42 approximate to 1.45-eV indirect band gap. The band-gap energy was estimated using the optical absorbance curves. The direct band gap transition dominated the MoS2 films. The number of molecular layers in the 2-D MoS2 films could be controlled relatively easily. The development of thin-film transistors using reactive thermally evaporated MoS2 active layers is currently underway. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Taylor & Francis | - |
dc.title | Characteristics of two-dimensional MoS2 films deposited using a reactive thermal evaporation method | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1080/15421406.2016.1277647 | - |
dc.identifier.scopusid | 2-s2.0-85019155454 | - |
dc.identifier.wosid | 000401194700025 | - |
dc.identifier.bibliographicCitation | Molecular Crystals and Liquid Crystals, v.645, no.1, pp 193 - 198 | - |
dc.citation.title | Molecular Crystals and Liquid Crystals | - |
dc.citation.volume | 645 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 193 | - |
dc.citation.endPage | 198 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | INTEGRATED-CIRCUITS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordAuthor | Band gap | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | two-dimensional | - |
dc.subject.keywordAuthor | reactive thermal evaporation | - |
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