Characteristics of two-dimensional MoS2 films deposited using a reactive thermal evaporation method
- Authors
- Park, Tae-Kwang; Lee, Ho-Nyeon
- Issue Date
- 2017
- Publisher
- Taylor & Francis
- Keywords
- Band gap; MoS2; two-dimensional; reactive thermal evaporation
- Citation
- Molecular Crystals and Liquid Crystals, v.645, no.1, pp 193 - 198
- Pages
- 6
- Journal Title
- Molecular Crystals and Liquid Crystals
- Volume
- 645
- Number
- 1
- Start Page
- 193
- End Page
- 198
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/8442
- DOI
- 10.1080/15421406.2016.1277647
- ISSN
- 1542-1406
1543-5318
- Abstract
- In this study, we fabricated three- and four-molecule-thick two-dimensional (2-D) MoS2 films using a reactive thermal evaporation method. The number of layers was estimated using optical transmittance. The MoS2 films had a 1.89-eV direct band gap and 1.42 approximate to 1.45-eV indirect band gap. The band-gap energy was estimated using the optical absorbance curves. The direct band gap transition dominated the MoS2 films. The number of molecular layers in the 2-D MoS2 films could be controlled relatively easily. The development of thin-film transistors using reactive thermally evaporated MoS2 active layers is currently underway.
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Collections - College of Engineering > Department of Display and Electronic Information Engineering > 1. Journal Articles
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