Wafer-Scale Epitaxial Growth of an Atomically Thin Single-Crystal Insulator as a Substrate of Two-Dimensional Material Field-Effect Transistors
- Authors
- Kim, EH[Kim, Eun Hye]; Lee, DH[Lee, Do Hee]; Gu, TJ[Gu, Tae Jun]; Yoo, H[Yoo, Hyobin]; Jang, Y[Jang, Yamujin]; Jeong, J[Jeong, Jaemo]; Kim, HW[Kim, Hyun-Woo]; Kang, SG[Kang, Seog-Gyun]; Kim, H[Kim, Hoijoon]; Lee, HS[Lee, Heesoo]; Jo, KJ[Jo, Kyu-Jin]; Kim, BJ[Kim, Beom Ju]; Kim, JW[Kim, Jin Wook]; Im, SH[Im, Seong Hyun]; Oh, CS[Oh, Chang Seok]; Lee, CG[Lee, Changgu]; Kim, KK[Kim, Ki Kang]; Yang, CW[Yang, Cheol-Woong]; Kim, H[Kim, Hyoungsub]; Kim, Y[Kim, Youngkuk]; Kim, P[Kim, Philip]; Whang, D[Whang, Dongmok]; Ahn, JR[Ahn, Joung Real]
- Issue Date
- Apr-2023
- Publisher
- American Chemical Society
- Keywords
- Graphene; Atomically thin insulator; Field-effect transistors; Low-energy electron diffraction; Angle-resolved photoemission spectroscopy
- Citation
- NANO LETTERS, v.23, no.7, pp.3054 - 3061
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO LETTERS
- Volume
- 23
- Number
- 7
- Start Page
- 3054
- End Page
- 3061
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/102784
- DOI
- 10.1021/acs.nanolett.3c00546
- ISSN
- 1530-6984
- Abstract
- As the electron mobility of two-dimensional (2D) materials is dependent on an insulating substrate, the nonuniform surface charge and morphology of silicon dioxide (SiO2) layers degrade the electron mobility of 2D materials. Here, we demonstrate that an atomically thin single-crystal insulating layer of silicon oxynitride (SiON) can be grown epitaxially on a SiC wafer at a wafer scale and find that the electron mobility of graphene field-effect transistors on the SiON layer is 1.5 times higher than that of graphene field-effect transistors on typical SiO2 films. Microscale and nanoscale void defects caused by heterostructure growth were eliminated for the wafer-scale growth of the single-crystal SiON layer. The single-crystal SiON layer can be grown on a SiC wafer with a single thermal process. This simple fabrication process, compatible with commercial semiconductor fabrication processes, makes the layer an excellent replacement for the SiO2/Si wafer. © 2023 American Chemical Society.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Science > Department of Physics > 1. Journal Articles
- Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
- Graduate School > Energy Science > 1. Journal Articles
- Engineering > School of Mechanical Engineering > 1. Journal Articles
- Graduate School > Advanced Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.