One-Step Passivation of Both Sulfur Vacancies and SiO<sub>2</sub> Interface Traps of MoS<sub>2</sub> Device
- Authors
- Ahn, B[Ahn, Byungwook]; Kim, Y[Kim, Yoonsok]; Kim, M[Kim, Meeree]; Yu, HM[Yu, Hyang Mi]; Ahn, J[Ahn, Jaehun]; Sim, E[Sim, Eunji]; Ji, H[Ji, Hyunjin]; Gul, HZ[Gul, Hamza Zad]; Kim, KS[Kim, Keun Soo]; Ihm, K[Ihm, Kyuwook]; Lee, H[Lee, Hyoyoung]; Kim, EK[Kim, Eun Kyu]; Lim, SC[Lim, Seong Chu]
- Issue Date
- 30-Aug-2023
- Publisher
- AMER CHEMICAL SOC
- Keywords
- concurrent passivation; MoS2; protoninjection; interface trap; sulfur vacancy; bulk trap
- Citation
- NANO LETTERS, v.23, no.17, pp.7927 - 7933
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO LETTERS
- Volume
- 23
- Number
- 17
- Start Page
- 7927
- End Page
- 7933
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/108655
- DOI
- 10.1021/acs.nanolett.3c01753
- ISSN
- 1530-6984
- Abstract
- Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS2 FET. By applying back-gate bias, protons from an H-TFSI droplet are injected into the MoS2, penetrating deeply enough to reach the SiO2 gate oxide. The characterizations employing low-temperature transport and deep-level transient spectroscopy (DLTS) studies reveal that the trap density of S vacancies in MoS2 drops to the lowest detection level. The temperature-dependent mobility plot on the SiO2 substrate resembles that of the h-BN substrate, implying that dangling bonds in SiO2 are passivated. The carrier mobility on the SiO2 substrate is enhanced by approximately 2200% after the injection.
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Collections - Graduate School > Energy Science > 1. Journal Articles
- Graduate School > Chemistry > 1. Journal Articles
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