A novel gate driver circuit for depletion-mode a-IGZO TFTs
- Authors
- Oh J.[Oh J.]; Jung K.-M.[Jung K.-M.]; Lee J.[Lee J.]; Jung E.K.[Jung E.K.]; Jeon J.-H.[Jeon J.-H.]; Park K.[Park K.]; Kim Y.-S.[Kim Y.-S.]
- Issue Date
- Dec-2019
- Publisher
- Wiley-Blackwell Publishing Ltd
- Keywords
- a-IGZO TFT; depletion mode; gate driver circuit; power consumption; Q node; threshold voltage
- Citation
- Journal of the Society for Information Display, v.27, no.12, pp.776 - 784
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of the Society for Information Display
- Volume
- 27
- Number
- 12
- Start Page
- 776
- End Page
- 784
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/13544
- DOI
- 10.1002/jsid.860
- ISSN
- 1071-0922
- Abstract
- In this paper, a novel gate driver circuit, which can achieve high reliability for depletion mode in a-InGaZnO thin-film transistors (TFTs), was proposed. To prevent the leakage current paths for Q node effectively, the new driving method was proposed by adopting the negative gate-to-source voltage (VGS) value for pull-down units. The results showed all the VOUT voltage waveforms were maintained at VGH voltage despite depletion-mode operation. The proposed circuit could also obtain stable VOUT voltage when the threshold voltage for all TFTs was changed from −6.5 to +11.5 V. Therefore, the circuit can achieve high reliability regardless of threshold voltage value for a-IGZO TFTs. In addition, the output characteristics and total power consumption were shown for the alternating current (AC)–driven and direct current (DC)–driven methods based on 120-Hz full-HD graphics (1920 × 1080) display panel. The results showed that the AC-driven method could achieve improved VOUT characteristics compared with DC-driven method since the leakage current path for Q node can be completely eliminated. Although power consumption of the AC-driven method can be slightly increased compared with the DC-driven method for enhancement mode, consumption can be lower when the operation has depletion-mode characteristics by preventing a leakage current path for pull-down units. Consequently, the proposed gate driver circuit can overcome the problems caused by the characteristics of a-IGZO TFTs. © 2019 Society for Information Display
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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