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Electron-beam-resist-free interference-type hexagonal boron nitride/chemical vapor deposition graphene/hexagonal boron nitride electronic devices
- Authors
- Chuang, C.[Chuang, C.]; Mineharu, M.[Mineharu, M.]; Matsunaga, M.[Matsunaga, M.]; Liu, C.-W.[Liu, C.-W.]; Wu, B.-Y.[Wu, B.-Y.]; Kim, G.-H.[Kim, G.-H.]; Watanabe, K.[Watanabe, K.]; Taniguchi, T.[Taniguchi, T.]; Liang, C.-T.[Liang, C.-T.]; Aoki, N.[Aoki, N.]
- Issue Date
- Dec-2019
- Publisher
- Elsevier Ltd
- Keywords
- Boron nitride; Chemical vapor deposition; Coherent; Graphene; Interference
- Citation
- Carbon, v.154, pp.238 - 243
- Indexed
- SCIE
SCOPUS
- Journal Title
- Carbon
- Volume
- 154
- Start Page
- 238
- End Page
- 243
- ISSN
- 0008-6223
- Abstract
- We report fabrication and measurements of hexagonal boron nitride (h-BN)/chemical vapor deposition (CVD) graphene/h-BN heterostructure devices without using expensive, time-consuming electron-beam lithography and toxic carbon tetrafluoride or sulfur tetrafluoride etching. We use efficient transfer of h-BN/CVD graphene by polypropylene carbonate onto a pre-prepared metal contacts/h-BN/SiO2 substrate. In this case, CVD-graphene is suspended from the h-BN substrate which allows efficient gas annealing process for improving the device mobility. Interestingly, we find that the top h-BN capping layer could enhance the carrier interference effect in CVD graphene, a great advantage for low-cost graphene-based interference-type electronic devices. © 2019 Elsevier Ltd
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Related Researcher
- KIM, GIL HO
- Information and Communication Engineering (Electronic and Electrical Engineering)