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Correlation between thermoelectric transport properties and crystal structure in two-dimensional CrSiTe 3

Authors
Lee, K.H.[Lee, K.H.]Yu, H.S.[Yu, H.S.]Kim, S.-I.[Kim, S.-I.]Moon, S.P.[Moon, S.P.]Hwang, J.-Y.[Hwang, J.-Y.]Kim, S.W.[Kim, S.W.]
Issue Date
25-Jun-2019
Publisher
Elsevier Ltd
Keywords
Charge distribution; CrSiTe 3; Crystallographic structure; Rietveld refinement; Thermoelectric
Citation
Journal of Alloys and Compounds, v.790, pp.93 - 98
Indexed
SCIE
SCOPUS
Journal Title
Journal of Alloys and Compounds
Volume
790
Start Page
93
End Page
98
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/15691
DOI
10.1016/j.jallcom.2019.03.198
ISSN
0925-8388
Abstract
The thermoelectric transport properties of artificially textured polycrystalline CrSiTe 3 samples have been investigated for elucidating their correlations with a crystal structure and the corresponding charge density distribution. We verified that the low mobility of 13–27 cm 2 V −1 s −1 attributing poor electronic transport properties is originated from the discrete charge density distribution in the covalently bonded layer. Also, the modulation of thermal conductivity values from 3.5 to 5.4 W m −1 K −1 with varying the texture was confirmed in pristine CrSiTe 3 . Thus, we suggest that the electronic and thermal transport properties of layer structured CrSiTe 3 are strongly correlated with crystallographic features. © 2019 Elsevier B.V.
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