High-performance ambipolar MoS2 transistor enabled by indium edge contacts

Abstract

The integration of electrical contact into 2D heterostructure is an essential approach to high-quality electronic nano-devices, especially field-effect transistors. However, high contact resistance with transition metal dichalcogenides such as molybdenum disulphide (MoS2)-based devices has been a significant fabrication impediment to their potential applications. Here, we have demonstrated the advantage of 1D indium metal contact with fully encapsulated MoS2 within hexagonal boron nitride. The electrical measurements of the device exhibit ambipolar transport with an on/off ratio of 10(2) for holes and 10(7) for electrons. The device exhibits high field-effect mobility of 40.7 cm(2) V-1 s(-1) at liquid nitrogen temperature. Furthermore, we have also analysed the charge-transport mechanism at the interface and have calculated the Schottky barrier height from the temperature-dependent measurement. These results are highly promising for the use of air-sensitive material heterostructure and large-scale design of trending flexible, transparent electronic wearable devices.