Design of front emitter layer for improving efficiency in silicon heterojunction solar cells via numerical calculations
- Authors
- Kim, S.[Kim, S.]; Park, H.[Park, H.]; 팜뒤퐁[팜뒤퐁]; Kim, Y.[Kim, Y.]; Kim, S.[Kim, S.]; Cho, E.-C.[Cho, E.-C.]; Cho, Y.[Cho, Y.]; Yi, J.[Yi, J.]
- Issue Date
- Jun-2021
- Publisher
- Elsevier GmbH
- Keywords
- AFORS-HET; Emitter; Heterojunction; High efficiency; Silicon; VIPV
- Citation
- Optik, v.235
- Indexed
- SCIE
SCOPUS
- Journal Title
- Optik
- Volume
- 235
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/1771
- DOI
- 10.1016/j.ijleo.2021.166580
- ISSN
- 0030-4026
- Abstract
- An a-Si:H (p) window layer is used in silicon heterojunction (SHJ) solar cells; however, it is limited by short-circuit current density (JSC). In general, an emitter with a high doping concentration is appropriate for contact with a transparent conducting oxide (TCO); however, it is influenced by side effects such as a reduction of JSC through optical absorption. The conductivity of the emitter is lowered as its doping concentration is reduced, resulting in a decrease in VOC and FF. We investigated p-type emitters such as those made of a-Si:H, a-SiC:H, and μc-SiO:H through film analysis and AFORS-HET simulation to improve the conversion efficiency of the device. Prior to conducting a simulation, a fabricated SHJ solar cell was used to theoretically calculate the precise parameter values. The obtained efficiency was 22.03 % when VOC =730 mV, JSC =39.63 mA/cm2, and FF = 76.13 %. Based on the fitted structure, we conducted experiments to test the emitter materials within a wide band gap and performed a simulation. In the case of μc-SiO:H (p), the achieved efficiency was 24.23 % when VOC =736.6 mV, JSC =40.15 mA/cm2, and FF = 81.93 %. © 2021 Elsevier GmbH
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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