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Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on transistor characteristics
- Authors
- Eom, TY[Eom, Tae-Yil]; Ahn, CH[Ahn, Chee-Hong]; Kang, JG[Kang, Jun-Gu]; Salman, MS[Salman, Muhammad Saad]; Lee, SY[Lee, Sun-Young]; Kim, YH[Kim, Yong-Hoon]; Lee, HJ[Lee, Hoo-Jeong]; Kang, CM[Kang, Chan-Mo]; Kang, C[Kang, Chiwon]
- Issue Date
- Jun-2018
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v.11, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 11
- Number
- 6
- ISSN
- 1882-0778
- Abstract
- In this study, we show the evolution of nitrogen defects during a sol-gel reaction in flash-lamp-annealed InGaZnO (IGZO) films and their effects on the device characteristics of their thin-film transistors (TFTs). The flash lamp annealing (FLA) of the IGZO TFT for 16s helps achieve a mobility of approximately 7cm(2) V-1 s(-1). However, further extension of the annealing time results only in drastic increases in carrier concentration and off-current. The X-ray photoelectron spectroscopy (XPS) analysis of the N 1s peak unravels the presence of oxygen-vacancy-associated nitrogen defects and their evolution with annealing time, which is possibly responsible for the increase in carrier concentration. (C) 2013 The Japan Society of Applied Physics.
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Related Researcher
- KIM, YONG HOON
- Engineering (Advanced Materials Science and Engineering)