Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage
- Authors
- Kang, D.-H.[Kang, D.-H.]; Choi, W.-Y.[Choi, W.-Y.]; Woo, H.[ Woo, H.]; Jang, S.[Jang, S.]; Park, H.-Y.[Park, H.-Y.]; Shim, J.[Shim, J.]; Choi, J.-W.[Choi, J.-W.]; Kim, S.[Kim, S.]; Jeon, S.[ Jeon, S.]; Lee, S.[Lee, S.]; Park, J.-H.[Park, J.-H.]
- Issue Date
- 16-Aug-2017
- Publisher
- AMER CHEMICAL SOC
- Keywords
- atomic switch; low-voltage circuit; low-voltage device; metal buffer; PVP/PMF
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27073 - 27082
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 9
- Number
- 32
- Start Page
- 27073
- End Page
- 27082
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/27838
- DOI
- 10.1021/acsami.7b07549
- ISSN
- 1944-8244
- Abstract
- In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10(5)), excellent cyclic endurance (>10(3)), and long retention time (>10(4) s), where poly-4-vinylphenol (PVP)/poly(rnelamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving, the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 X 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V), of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next generation electronic applications.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
- Graduate School > SKKU Advanced Institute of Nano Technology > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/27838)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.