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Highly Oriented SrTiO3 Thin Film on Graphene Substrate
- Authors
- Lee, S.A.[Lee, S.A.]; Hwang, J.-Y.[Hwang, J.-Y.]; Km, E.S.[Km, E.S.]; Kim, S.W.[Kim, S.W.]; Choi, W.S.[Choi, W.S.]
- Issue Date
- 1-Feb-2017
- Publisher
- AMER CHEMICAL SOC
- Keywords
- SrTiO3; graphene; thin film; pulsed laser deposition; interface; epitaxy; diffusion barrier; Si
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.9, no.4, pp.3246 - 3250
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 9
- Number
- 4
- Start Page
- 3246
- End Page
- 3250
- ISSN
- 1944-8244
- Abstract
- Growth of perovskite oxide thin films on Si in crystalline form has long been a critical obstacle for the integration of multifunctional oxides into Si-based technologies. In this study, we propose pulsed laser deposition of a crystalline SrTiO3 thin film on a Si using graphene substrate. The SrTiO3 thin film on graphene has a highly (00l)-oriented crystalline structure which results from the partial epitaxy. Moreover, graphene promotes a sharp interface by highly suppressing the chemical intermixing. The important role of graphene as a 2D substrate and diffusion barrier allows the expansion of device applications based on functional complex oxides.
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