Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method

Abstract

An experiential aspect regarding the improvement of retention characteristics of InSnZnO (ITZO) thin-film transistor-based nonvolatile memory (TFT-NVM) devices with a hydrogen peroxide H2O2 treated Aluminum oxide (Al2O3) tunneling layer is reported. A better performance in retention of similar to 92% (after ten years), a smaller subthreshold swing of 96 mV/decade, and a higher field effect mobility of 31.08 cm(2)/V.s were obtained in H2O2 treated TFT-NVM devices compared with untreated one. Furthermore, employing the H2O2-treatment in the Al2O3 layer provided oxygen-rich (O/Al ratio = 1.45) and OH-residuals free Al2O3, which effectively minimized the interface states (1.34 x 10(11) cm(-2) eV(-1)) between the ITZO/(Al2O3/SiOx/SiO2) stack through strong oxidation. These results suggest that high-quality Al2O3 dielectric layer can be obtained through cost-effective H2O2 oxidation techniques for TFT-NVM devices.