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Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways
- Authors
- Shin, YS[Shin, Yong Seon]; Kang, WT[Kang, Won Tae]; Kim, YR[Kim, Young Rae]; Won, UY[Won, Ui Yeon]; Lee, KY[Lee, Ki Young]; Heo, JS[Heo, Jin Seong]; Park, SJ[Park, Seong Jun]; Lee, YH[Lee, Young Hee]; Yu, WJ[Yu, Woo Jong]
- Issue Date
- Jun-2016
- Publisher
- WILEY-BLACKWELL
- Keywords
- graphene random mesh; heterostructure transistors; indium zinc oxide; transparent transistors
- Citation
- ADVANCED ELECTRONIC MATERIALS, v.2, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED ELECTRONIC MATERIALS
- Volume
- 2
- Number
- 6
- ISSN
- 2199-160X
- Abstract
- Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as series of tiny IZOs, which overcomes the large off-state leakage current in IZO/graphene.
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Related Researcher
- YU, WOO JONG
- Information and Communication Engineering (Electronic and Electrical Engineering)