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Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe NanoparticlesInvesting the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles

Other Titles
Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles
Authors
Lee D.-H.[Lee D.-H.]Kim J.-M.[Kim J.-M.]Lim K.-T.[Lim K.-T.]Cho H.J.[Cho H.J.]Bang J.H.[Bang J.H.]Kim Y.-S.[Kim Y.-S.]
Issue Date
Mar-2016
Publisher
KOREAN INST METALS MATERIALS
Citation
ELECTRONIC MATERIALS LETTERS, v.12, no.2, pp.276 - 280
Indexed
SCIE
SCOPUS
KCI
Journal Title
ELECTRONIC MATERIALS LETTERS
Volume
12
Number
2
Start Page
276
End Page
280
URI
https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/37582
DOI
10.1007/s13391-016-5387-8
ISSN
1738-8090
Abstract
In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices.
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