Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe NanoparticlesInvesting the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles
- Other Titles
- Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles
- Authors
- Lee D.-H.[Lee D.-H.]; Kim J.-M.[Kim J.-M.]; Lim K.-T.[Lim K.-T.]; Cho H.J.[Cho H.J.]; Bang J.H.[Bang J.H.]; Kim Y.-S.[Kim Y.-S.]
- Issue Date
- Mar-2016
- Publisher
- KOREAN INST METALS MATERIALS
- Citation
- ELECTRONIC MATERIALS LETTERS, v.12, no.2, pp.276 - 280
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 12
- Number
- 2
- Start Page
- 276
- End Page
- 280
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/37582
- DOI
- 10.1007/s13391-016-5387-8
- ISSN
- 1738-8090
- Abstract
- In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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