Evaluation of Minority Carrier Generation Lifetime for Oxide Semiconductors
- Authors
- Choi, P[Choi, Pyungho]; Lee, S[Lee, Sangmin]; Kim, H[Kim, Hyojung]; Park, J[Park, Jungmin]; Choi, B[Choi, Byoungdeog]
- Issue Date
- Jun-2020
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Oxide semiconductors; Indium gallium zinc oxide; Indium tin zinc oxide; Transient capacitance; Carrier generation lifetime
- Citation
- THIN SOLID FILMS, v.704
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 704
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/4103
- DOI
- 10.1016/j.tsf.2020.138023
- ISSN
- 0040-6090
- Abstract
- In this study, the transfer characteristics of InGaZnO (IGZO) and InSnZnO (ISZO) thin-film transistors are compared using the minority carrier generation lifetime method. Capacitance-voltage and capacitance-time characteristics of IGZO- and ISZO-based capacitors with a p(+)-Si/SiO2/IGZO or ISZO structure were evaluated at a 100 kHz frequency. Although the intrinsic carrier concentrations of IGZO and ISZO films are on the order of similar to 10(-7 )CM(-3), which is conjectured to result in a very low off-state drain current (I-D,I-OFF), even as small as zero, a magnitude of 10(-12) - 10(-11) A for I-D,I-OFF was measured in this study. We propose that this is due to the minority carriers, which are thermally generated from the channel defects. Furthermore, ISZO films exhibited faster transient capacitance characteristics compared to the IGZO films, which is associated with the amount of defect sites in the channel substrate. Thus, the lower transient time for the ISZO films is attributed to a larger number of oxygen vacancies in the channel layer than in IGZO films.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.