Hexagonal boron nitride assisted growth of stoichiometric Al2O3 dielectric on graphene for triboelectric nanogenerators
- Authors
- Han, SA[Han, Sang A.]; Lee, KH[Lee, Kang Hyuck]; Kim, TH[Kim, Tae-Ho]; Seung, W[Seung, Wanchul]; Lee, SK[Lee, Seok Kyeong]; Choi, S[Choi, Sungho]; Kumar, B[Kumar, Brijesh]; Bhatia, R[Bhatia, Ravi]; Shin, HJ[Shin, Hyeon-Jin]; Lee, WJ[Lee, Woo-Jin]; Kim, S[Kim, SeongMin]; Kim, HS[Kim, Hyoung Sub]; Choi, JY[Choi, Jae-Yong]; Kim, SW[Kim, Sang-Woo]
- Issue Date
- Mar-2015
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Hexagonal boron nitride nanosheets; Graphene; Atomic layer deposition; Dielectric Al2O3; Triboelectric nanogenerator
- Citation
- NANO ENERGY, v.12, pp.556 - 566
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO ENERGY
- Volume
- 12
- Start Page
- 556
- End Page
- 566
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/43488
- DOI
- 10.1016/j.nanoen.2015.01.030
- ISSN
- 2211-2855
- Abstract
- Here we demonstrate the deposition of a high-k dielectric material on graphene using hexagonal boron nitride (h-BN) nanosheets as a buffer layer. The presence of an h-BN layer on top of the graphene facilitated the growth of high-quality Al2O3 by atomic layer deposition (ALD). Simulation results also support the experimental observations and provide an explanation for the suitability of h-BN as a buffer layer in terms of mixed ionic-covalent B-N bonding. Additionally, h-BN works as a protective shield to prevent graphene oxidation during ALD of Al2O3 for the fabrication of graphene-based devices. Finally, triboelectric nanogenerators (TNGs) based on both Al2O3/h-BN/graphene and Al2O3/graphene structures are demonstrated for further confirming the importance of h-BN for synthesizing high-quality Al2O3 on graphene. It was found that the Al2O3/h-BN/graphene-based TNG reveals meaningful electric power generation under a mechanical friction, while no significant electric power output from the Al2O3/graphene-based TNG is obtained, indicating high charge storage capacity of the dielectric Al2O3 layer on h-BN. (C) 2015 Elsevier Ltd. All rights reserved.
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- Appears in
Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
- Graduate School > SKKU Advanced Institute of Nano Technology > 1. Journal Articles
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