Dual electrical behavior of multivalent metal cation-based oxide and its application to thin-film transistors with high mobility and excellent photobias stability
- Authors
- Yun M.G.[Yun M.G.]; Ahn C.H.[Ahn C.H.]; Cho S.W.[Cho S.W.]; Kim S.H.[Kim S.H.]; Kim Y.K.[Kim Y.K.]; Cho H.K.[Cho H.K.]
- Issue Date
- 2015
- Keywords
- multivalent metal cation; dual electrical property; oxide semiconductor; thin film transistor; stability
- Citation
- ACS Applied Materials and Interfaces, v.7, no.11, pp.6118 - 6124
- Journal Title
- ACS Applied Materials and Interfaces
- Volume
- 7
- Number
- 11
- Start Page
- 6118
- End Page
- 6124
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/48944
- DOI
- 10.1021/am5085836
- Abstract
- The effect of multivalent metal cations, including vanadium(V) and tin (Sn), on the electrical properties of vanadium-doped zinc tin oxide (VZTO) was investigated in the context of the fabrication of thin-film transistors (TFTs) using a single VZTO film and VZTO/ZTO bilayer as channel layers. The single VZTO TFT did not show any response to the gate voltage (insulator-like behavior). On the other hand, the VZTO/ZTO bilayer TFT exhibited a typical TFT transfer characteristic (semiconducting behavior). X-ray photoelectron spectroscopy revealed that, in contrast to what is commonly true in many oxides, oxygen vacancies (VO) in VZTO did not provide a dominant contribution to the total carrier concentration, because the VO peak area in the single VZTO film was 5.4% and reduced to 4.5% in VZTO/ZTO bilayer. Instead, Sn 3d5/2 and V 2p3/2 spectra suggest that the significant reduction in Sn and V ions is strongly related to the insulator-like behavior of the VZTO film. In negative-bias illumination tests and illumination tests with various photon energies, the VZTO/ZTO bilayer TFT had much better stability than the ZTO TFT. This result is attributed to the reduction of donor-like states (VO) that can be positively ionized by blue and green illumination. © 2015 American Chemical Society.
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Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
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