Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide
- Authors
- Jang, J[Jang, Jingon]; Yoon, Y[Yoon, Yeoheung]; Jeong, H[Jeong, Hyunhak]; Lee, H[Lee, Hyungwoo]; Song, Y[Song, Younggul]; Cho, K[Cho, Kyungjune]; Hong, S[Hong, Seunghun]; Lee, H[Lee, Hyoyoung]; Lee, T[Lee, Takhee]
- Issue Date
- 2-Sep-2013
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- THIN SOLID FILMS, v.542, pp.327 - 331
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 542
- Start Page
- 327
- End Page
- 331
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/59359
- DOI
- 10.1016/j.tsf.2013.07.008
- ISSN
- 0040-6090
- Abstract
- We report a performance enhancement of triisopropylsilylethynyl (TIPS) pentacene organic field effect transistors (OFETs) obtained by treating the surface of SiO2/Si substrate with dispersible reduced graphene oxide (rGO). The source and drain electrodes were patterned with inkjet-printed highly conductive silver. The sheet resistance of inkjet-patterned silver electrodes has found to be similar to 1 Omega/square, which is comparable to that of typical vacuum-evaporated silver electrodes. The electrical performance has improved by rGO treatment, with a morphology improved for the active TIPS pentacene layer. The rGO treatment increased the morphological grain size of TIPS pentacene, resulting in a decreased number of interfacial trapping sites in the carrier transport paths. The field effect mobility of the TIPS pentacene OFETs, following the rGO surface treatment, was improved from 0.082 cm(2)/V.s to 0.141 cm(2)/V.s. (C) 2013 Elsevier B.V. All rights reserved.
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Collections - Science > Department of Chemistry > 1. Journal Articles
- Graduate School > Energy Science > 1. Journal Articles
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