p-Channel Oxide Thin Film Transistors Using Solution-Processed Copper Oxide
- Authors
- Kim, SY[Kim, Sang Yun]; Ahn, CH[Ahn, Cheol Hyoun]; Lee, JH[Lee, Ju Ho]; Kwon, YH[Kwon, Yong Hun]; Hwang, S[Hwang, Sooyeon]; Lee, JY[Lee, Jeong Yong]; Cho, HK[Cho, Hyung Koun]
- Issue Date
- 10-Apr-2013
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Cu2O; p-type oxide semiconductor; p-channel TFT; s
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.5, no.7, pp.2417 - 2421
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 5
- Number
- 7
- Start Page
- 2417
- End Page
- 2421
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/60920
- DOI
- 10.1021/am302251s
- ISSN
- 1944-8244
- Abstract
- Cu2O thin films were synthesized on Si (100) substrate with thermally grown 200-nm SiO2 by sol-gel spin coating method and postannealing under different oxygen partial pressure (0.04, 0.2, and 0.9 Torr). The morphology of Cu2O thin films was improved through N2 postannealing before O-2 annealing. Under relatively high oxygen partial pressure of 0.9 Tort, the roughness of synthesized films was increased with the formation of CuO phase. Bottom-gated copper oxide (CuxO) thin film transistors (TFTs) were fabricated via conventional photolithography, and the electrical properties of the fabricated TFTs were measured. The resulting Cu2O TFTs exhibited p-channel operation, and field effect mobility of 0.16 cm(2)/(Vs) and on-to-off drain current ratio of similar to 1 x 10(2) were observed in the TFT device annealed at P-O2 of 0.04 Torr. This study presented the potential of the solution-based process of the Cu2O TFT with p-channel characteristics for the first time.
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Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
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