Donor and Acceptor Dynamics of Phosphorous Doped ZnO Nanorods with Stable p-Type Conduction: Photoluminescence and Junction Characteristics
- Authors
- Ahn, CH[Ahn, Cheol Hyoun]; Mohanta, SK[Mohanta, Sanjay Kumar]; Cho, HK[Cho, Hyung Koun]
- Issue Date
- Jul-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- p-Doped ZnO; Nanorods; p-Type
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5571 - 5576
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 12
- Number
- 7
- Start Page
- 5571
- End Page
- 5576
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/64933
- DOI
- 10.1166/jnn.2012.6224
- ISSN
- 1533-4880
- Abstract
- We employed temperature-dependent photoluminescence (PL) to explain the donor and acceptor dynamics in phosphorus doped stable p-type P:ZnO nanorods. The room temperature PL revealed good crystalline and optical quality of P:ZnO nanorods. The 10 K PL spectrum exhibited a dominant acceptor bound exciton (A(0)X) or donor bound exciton ((DX)-X-0) emission corresponding to p- and n-type P:ZnO nanorods, respectively. The donor acceptor-pair (DAP) transitions exhibited different thermal dissociation energies for the p- and n-type P:ZnO nanorods, suggesting their different quenching channels. The quenching of the DAP transitions of the p-type ZnO:P nanorods was associated with the thermal dissociation of the DAP into free excitons, while the DAP transition of the n-type ZnO:P nanorods was quenched through the thermal dissociation of the shallow donor into free electrons. The rectifying behavior of a p-n homojunction diode formed by the p-type P:ZnO nanorods on n-type ZnO film confirmed the p-type conduction of the P:ZnO nanorods.
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Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
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