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Majority Carrier Type Conversion with Floating Gates in Carbon Nanotube Transistors
- Authors
- Yu, WJ[Yu, Woo Jong]; Kang, BR[Kang, Bo Ram]; Lee, IH[Lee, Il Ha]; Min, YS[Min, Yo-Sep]; Lee, YH[Lee, Young Hee]
- Issue Date
- 18-Dec-2009
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- ADVANCED MATERIALS, v.21, no.47, pp.4821 - +
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 21
- Number
- 47
- Start Page
- 4821
- End Page
- +
- ISSN
- 0935-9648
- Abstract
- A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for type conversion from p- to n-type and vice versa of carbon nanotube (CNT) channels. Type conversion from p- to n-type and vice versa for CNT field effect transistors can be realized by changing the polarity of trapped charges (see figure).
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Related Researcher
- YU, WOO JONG
- Information and Communication Engineering (Electronic and Electrical Engineering)