Detailed Information
Cited 12 time in 
Cited 14 time in 
Cited 14 time in
Metadata Downloads
Al/Au ohmic contact to n-ZnO by dc sputtering
- Authors
- Kim, JH[Kim, J. H.]; Moon, JY[Moon, J. Y.]; Lee, HS[Lee, H. S.]; Han, WS[Han, W. S.]; Cho, HK[Cho, H. K.]; Lee, JY[Lee, J. Y.]; Kim, HS[Kim, H. S.]
- Issue Date
- 25-Nov-2009
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, v.165, no.1-2, pp.77 - 79
- Indexed
- SCIE
SCOPUS
- Volume
- 165
- Number
- 1-2
- Start Page
- 77
- End Page
- 79
- ISSN
- 0921-5107
- Abstract
- We deposited Al (50 nm)/Au (250 nm) layers on n-ZnO in order to produce low-resistance ohmic contacts by using a dc Sputtering method. The samples were annealed at various temperatures for 1 min in N-2 ambient. The electrical and the structural properties of the Al/Au contact to n-ZnO were investigated. According to the current-voltage measurements, both the as-deposited and annealed samples showed an ohmic behavior. The specific contact resistance of the sample annealed at 200 degrees C was 1.4 x 10(-4) Omega Cm-2. Further increasing the temperature above 400 degrees C led to an increase in the specific contact resistance. The Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) measurements were used to characterize the nature of the interfacial layer between the Al/Au and ZnO layers. Possible explanation is given to describe the dependence of the annealing temperature on the electrical properties of Al/Au contact to n-ZnO. (C) 2008 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- CHO, HYUNG KOUN
- Engineering (Advanced Materials Science and Engineering)