N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition
- Authors
- Sun, Q[Sun, Qian]; Cho, YS[Cho, Yong Suk]; Kong, BH[Kong, Bo Hyun]; Cho, HK[Cho, Hyung Koun]; Ko, TS[Ko, Tsung Shine]; Yerino, CD[Yerino, Christopher D.]; Lee, IH[Lee, In-Hwan]; Han, J[Han, Jung]
- Issue Date
- 1-May-2009
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- N-face; Nitridation; Nucleation evolution; X-ray diffraction; Metalorganic chemical vapor deposition; Nitrides
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.311, no.10, pp.2948 - 2952
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 311
- Number
- 10
- Start Page
- 2948
- End Page
- 2952
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/77885
- DOI
- 10.1016/j.jcrysgro.2009.01.059
- ISSN
- 0022-0248
- Abstract
- In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN. (C) 2009 Published by Elsevier B.V.
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Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
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