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Synthesis and properties of triangular-shaped GaN nanorods via growth mode control
- Authors
- Kang, SM[Kang, S. M.]; Shin, TI[Shin, T. I.]; Dihn, DV[Dihn, D. V.]; Yang, JH[Yang, J. H.]; Kim, SW[Kim, S. -W.]; Yoon, DH[Yoon, D. H.]
- Issue Date
- 15-Jan-2009
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Crystal morphology; Nanostructures; Chemical vapor deposition processes; Semiconducting III-V materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.311, no.3, pp.490 - 494
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 311
- Number
- 3
- Start Page
- 490
- End Page
- 494
- ISSN
- 0022-0248
- Abstract
- The synthesis of wurtzite gallium nitride (GaN) nanorods with triangular shape on c-Al(2)O(3) substrates using a thermal chemical vapor deposition process was investigated. It was possible to control nanorod shape and growth mode of GaN nanorods by change of sample geometry in the chamber using a mixture of GaN powder and Ga metal with ammonia gas reaction. It was found that the GaN nanorods were grown via both vapor-liquid-solid and vapor-solid mode with change of sample placement in the chamber. The morphology of the GaN nanorods was observed by field-emission scanning electron microscopy in secondary electron and back-scattered electron mode. High-resolution transmission electron microscopy, and X-ray scattering measurements revealed the GaN nanorods to have a single-crystalline wurtzite structure. (C) 2008 Elsevier B.V. All rights reserved.
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Related Researcher
- YOON, DAE HO
- Engineering (Advanced Materials Science and Engineering)