Ga-doped ZnO nanorod arrays grown by thermal evaporation and their electrical behavior
- Authors
- Ahn, CH[Ahn, Cheol Hyoun]; Han, WS[Han, Won Suk]; Kong, BH[Kong, Bo Hyun]; Cho, HK[Cho, Hyung Koun]
- Issue Date
- 7-Jan-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.20, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 20
- Number
- 1
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/78671
- DOI
- 10.1088/0957-4484/20/1/015601
- ISSN
- 0957-4484
- Abstract
- Vertically well-aligned Ga-doped ZnO nanorods with different Ga content were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt% Ga with respect to the Zn content showed minimum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. A p-n diode structure with Ga-doped ZnO nanorods as an n-type layer displayed a distinct white light luminescence from the side view of the device, showing weak ultraviolet and various deep-level emissions.
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- Appears in
Collections - Engineering > School of Advanced Materials Science and Engineering > 1. Journal Articles
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