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Interfacial reaction of atomic-layer-deposited HfO(2) film as a function of the surface state of an n-GaAs (100) substrate
- Authors
- Kim, CY[Kim, C. Y.]; Cho, SW[Cho, S. W.]; Cho, MH[Cho, M. -H.]; Chung, KB[Chung, K. B.]; An, CH[An, C. -H.]; Kim, H[Kim, H.]; Lee, HJ[Lee, H. J.]; Ko, DH[Ko, D. -H.]
- Issue Date
- 10-Nov-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.19
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 19
- ISSN
- 0003-6951
- Abstract
- The characteristics of interfacial reactions and the valence band offset of HfO(2) films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO(2) film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 degrees C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.
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Related Researcher
- KIM, HYOUNG SUB
- Engineering (Advanced Materials Science and Engineering)