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Reduction of stacking fault density in m-plane GaN grown on SiC
- Authors
- Cho, YS[Cho, Y. S.]; Sun, Q[Sun, Q.]; Lee, IH[Lee, I. -H.]; Ko, TS[Ko, T. -S.]; Yerino, CD[Yerino, C. D.]; Han, J[Han, J.]; Kong, BH[Kong, B. H.]; Cho, HK[Cho, H. K.]; Wang, S[Wang, S.]
- Issue Date
- 15-Sep-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.11
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 11
- ISSN
- 0003-6951
- Abstract
- We report the reduction in basal-plane stacking faults (BSFs) in m-plane GaN grown on m-plane SiC. The origin of BSFs is linked to heteronucleation of m-plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 10(5) cm(-1). Anisotropy in on-axis x-ray rocking curves, a salient feature in m-plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaN/GaN quantum well emission are presented. (C) 2008 American Institute of Physics.
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Related Researcher
- CHO, HYUNG KOUN
- Engineering (Advanced Materials Science and Engineering)