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Effect of a buffer layer on microstructural evolution in ZnO/Si heterostructures
- Authors
- Kim, JH[Kim, J. H.]; Moon, JY[Moon, J. Y.]; Lee, HS[Lee, H. S.]; Kong, BH[Kong, B. H.]; Cho, HK[Cho, H. K.]; Jung, ES[Jung, E. S.]; Kim, HS[Kim, H. S.]; Kim, TW[Kim, T. W.]
- Issue Date
- Apr-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ZnO; buffer layer; transmission electron microscopy; microstructure
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1061 - 1064
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 52
- Number
- 4
- Start Page
- 1061
- End Page
- 1064
- ISSN
- 0374-4884
- Abstract
- We have deposited ZnO thin films on Si(111) substrates with and without a low temperature-grown ZnO buffer layer by using radio-frequency (rf) magnetron sputtering. The microstructural properties of ZnO/Si heterostructures have been investigated by using X-ray diffraction (XRD), pole-figures and transmission electron microscopy (TEM) measurements. The results of XRD, pole figures and TEM showed that both ZnO thin films with and without an embedded buffer layer had highly c-axis preferred orientations. When low-temperature-grown ZnO was used as an embedded buffer layer, the crystal quality of the ZnO thin films was improved due to the reduced rotation of the c-axis, despite its smaller grain size.
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Related Researcher
- CHO, HYUNG KOUN
- Engineering (Advanced Materials Science and Engineering)