SiO2 films deposited at low temperature by using APCVD with TEOS/O-3 for TFT applications
- Authors
- Kim, J[Kim, Junsik]; Hwang, S[Hwang, Sunghyun]; Yi, JS[Yi, Junsin]
- Issue Date
- Sep-2006
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.3, pp.1121 - 1125
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 49
- Number
- 3
- Start Page
- 1121
- End Page
- 1125
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/86820
- ISSN
- 0374-4884
- Abstract
- A silicon-dioxide (SiO2) film was deposited using tetra ethyl orthosilicate (TEOS) along with oxygen (O-2) or ozone (O-3) as a reaction gas in an atmospheric pressure chemical vapor deposition (APCVD) system instead of using a hazardous gas like SiH4. h was impossible to grow the film below 500 degrees C by using O-2 as a reaction gas. The films deposited at 400 degrees C using O-3 as a reaction gas showed the best deposition rate and electrical and optical properties good enough to make them applicable for many semiconductor devices, especially poly-silicon (poly-Si) thin-film transistors (TFTs). The annealing of the films at 700 degrees C. was found to reduce the interface defect density, making the film more useful as a passivation layer. Conventional APCVD requires high-temperature processing whereas in the current study, we developed a low-temperature process. The interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in an air ambient.
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Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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