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A high efficiency variable stage and frequency charge pump for wide range ISPP
- Authors
- Kim, S.-W.[Kim, S.-W.]; Yang, J.-H.[Yang, J.-H.]; Park, E.-J.[Park, E.-J.]; Choi, J.-M.[Choi, J.-M.]; Kwon, K.-W.[Kwon, K.-W.]
- Issue Date
- 2020
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Charge pump; Flash memories; Incremental-step-pulse-programming (ISPP); Variable frequency; Variable stage
- Citation
- Proceedings - IEEE International Symposium on Circuits and Systems, v.2020-October
- Indexed
- SCOPUS
- Volume
- 2020-October
- ISSN
- 0271-4310
- Abstract
- In this paper, an accurate boosted power supply is proposed for various voltage levels required in incremental step pulse programming technique for fine control of memory cell threshold voltage throughout wide range of output voltages. In addition, during the boosting process, the frequency of the pumping clock and the number of pumping stages can be adaptively adjusted simultaneously to maintain the optimum power efficiency. The charge pump proposed in this paper is designed with 180nm CMOS process. It occupies an area of 0.199mm2 and operates on a 3.3V supply. It can generate 8 levels of incremental step pulse programming voltage(9.68 ~ 12.5V), the average ripple voltage is about 0.13V and the average efficiency is 15.6%. © 2020 IEEE
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Related Researcher
- KWON, KEE WON
- Information and Communication Engineering (Semiconductor Systems Engineering)