Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
- Authors
- Jo, SH[Jo, Seo-Hyeon]; Lee, SG[Lee, Sung-Gap]; Lee, YH[Lee, Young-Hie]
- Issue Date
- 5-Jan-2012
- Publisher
- SPRINGER
- Keywords
- ZnO film; growth angle; antireflection coating; RF
- Citation
- NANOSCALE RESEARCH LETTERS, v.7, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE RESEARCH LETTERS
- Volume
- 7
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/94876
- DOI
- 10.1186/1556-276X-7-54
- ISSN
- 1931-7573
- Abstract
- In this study, Pb(Zr0.52Ti0.48)O-3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm(2) and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 x 10(-7) A/cm(2).
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- Appears in
Collections - Information and Communication Engineering > School of Electronic and Electrical Engineering > 1. Journal Articles
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