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The electrical characterization and relaxation behavior of Ag(Ta0.8Nb0.2)O3 ceramics
- Authors
- Kim, Y.-S.; Kim, J.-C.; Jeong, T.-H.; Nam, S.-P.; Lee, S.-H.; Kim, H.-K.; Lee, K.-T.
- Issue Date
- 2014
- Publisher
- Korean Institute of Electrical and Electronic Material Engineers
- Keywords
- Ceramics; Relaxation current; XRD
- Citation
- Transactions on Electrical and Electronic Materials, v.15, no.2, pp.100 - 102
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 15
- Number
- 2
- Start Page
- 100
- End Page
- 102
- ISSN
- 1229-7607
- Abstract
- Ag(Ta,Nb)O3 materials have a perovskite structure with a low loss tangent. These materials have been widely researched for their applications as high-frequency, passive components. Also, Ag(Ta,Nb)O3 materials have weak frequency dispersion with high dielectric permittivity which gives them enormous potential for use in electronic components, including the filters, and embedded capacitors. Therefore, our research will discuss the structural and electrical relaxation properties of Ag(Ta0.8Nb0.2)O3 ceramics for device applications. We will investigate using X-ray diffraction to understand their structural properties and will analyze voltage dependent leakage current and timedependent relaxation behavior to understand their material properties. © 2014 KIEEME. All rights reserved.
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Related Researcher
- Kim, Jae Chul
- College of Engineering (School of Electrical Engineering)