A Pedagogical Perspective on Ambipolar FETs
- Authors
- Kang, Moon Sung; Frisbie, C. Daniel
- Issue Date
- 3-Jun-2013
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- ambipolar field-effect transistors; channel potential; charge carriers; currentvoltage characteristics; transistor operation regime
- Citation
- CHEMPHYSCHEM, v.14, no.8, pp.1547 - 1552
- Journal Title
- CHEMPHYSCHEM
- Volume
- 14
- Number
- 8
- Start Page
- 1547
- End Page
- 1552
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/11248
- DOI
- 10.1002/cphc.201300014
- ISSN
- 1439-4235
- Abstract
- The operation of an ambipolar field-effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor-operation regimes and the resulting currentvoltage relations can be easily understood. Also, a practical guidance for the operation of an ambipolar FET is provided. In particular, conditions to achieve the true ambipolar regime, which is of particular interest for light-emitting transistor operation, and a correct method to extract electron and hole mobilities from a given currentvoltage curve are presented.
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Collections - College of Engineering > Department of Chemical Engineering > 1. Journal Articles
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