Detailed Information
Cited 50 time in 
Cited 52 time in 
Cited 52 time in
Metadata Downloads
Gallium nitride nanostructures for light-emitting diode applications
- Issue Date
- May-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Gallium nitride; Nanostructures; Light-emitting diodes
- Citation
- NANO ENERGY, v.1, no.3, pp.391 - 400
- Journal Title
- NANO ENERGY
- Volume
- 1
- Number
- 3
- Start Page
- 391
- End Page
- 400
- ISSN
- 2211-2855
- Abstract
- This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a brief explanation of the basic components of the LED structure based on nitride nanostructures. Various device architectures of nanostructured GaN LEDs, as the main focus of the review, are then presented, covering research from the early LEDs based on a single GaN nanostructure to the most advanced LEDs based on GaN nanostructure arrays on flexible substrates. The research discussed in this review will promote novel applications of GaN LEDs that exploit the advantages of nanostructures. (C) 2012 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Chemical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.