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Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors
- Authors
- Park, SY; Kim, BJ; Kim, K; Kang, MS; Lim, KH; Il Lee, T; Myoung, JM; Baik, HK; Cho, JH; Kim, YS
- Issue Date
- Feb-2012
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- ADVANCED MATERIALS, v.24, pp.834 - +
- Journal Title
- ADVANCED MATERIALS
- Volume
- 24
- Start Page
- 834
- End Page
- +
- ISSN
- 0935-9648
- Abstract
- Transfer characteristics of ZnO thin-film transistors (TFTs) based on ZnO doped with various alkali metals. A new doping method is demonstrated by employing alkali metals to achieve high-performance and solution-processed ZnO TFTs with a low processing temperature (similar to 300 degrees C), which is applicable to flexible plastic substrates.
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Collections - College of Engineering > Department of Chemical Engineering > 1. Journal Articles
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