Pulsed Electron Deposition of 50-nm-thick ZnO Film at Room Temperature

Abstract

We used pulsed electron deposition (PED) method to grow 50-nm-thick ZnO thin film on quartz and Si substrate at room temperature. X-ray diffraction (XRD) measurement shows the (002) peak with full width at half maximum (FWHM) of 0.87 degrees. Photoluminescenct (PL) and IR transmission data exhibit the energy band gap (3.3 eV) and optical phonon frequency (50.7 meV) which are consistent with those of single crystal ZnO. Visible-UV transmission level is enhanced when oxygen partial pressure in the growth chamber increases. Our results prove that thin ZnO film with reasonable structural, surface and optical property can be grown at low temperatures using PED method. (C) 2011 The Japan Society of Applied Physics