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Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

Authors
Lee, D.Yoon, A.Jang, S. Y.Yoon, J. -G.Chung, J. -S.Kim, M.Scott, J. F.Noh, T. W.
Issue Date
Jul-2011
Publisher
AMER PHYSICAL SOC
Citation
PHYSICAL REVIEW LETTERS, v.107, no.5
Journal Title
PHYSICAL REVIEW LETTERS
Volume
107
Number
5
URI
http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/13617
DOI
10.1103/PhysRevLett.107.057602
ISSN
0031-9007
Abstract
We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
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