Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films
- Authors
- Lee, D.; Yoon, A.; Jang, S. Y.; Yoon, J. -G.; Chung, J. -S.; Kim, M.; Scott, J. F.; Noh, T. W.
- Issue Date
- Jul-2011
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW LETTERS, v.107, no.5
- Journal Title
- PHYSICAL REVIEW LETTERS
- Volume
- 107
- Number
- 5
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/13617
- DOI
- 10.1103/PhysRevLett.107.057602
- ISSN
- 0031-9007
- Abstract
- We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
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