Nanostructural analysis of GaN tripods and hexapods grown on c-plane sapphire
- Authors
- Lee, Sanghwa; Sohn, Yuri; Kim, Chinkyo; Lee, Dong Ryeol; Lee, Hyun-Hwi
- Issue Date
- Dec-2010
- Publisher
- WILEY-BLACKWELL PUBLISHING, INC
- Keywords
- GaN; nanorods; tripods; hexapods; inversion domains
- Citation
- JOURNAL OF APPLIED CRYSTALLOGRAPHY, v.43, pp.1300 - 1304
- Journal Title
- JOURNAL OF APPLIED CRYSTALLOGRAPHY
- Volume
- 43
- Start Page
- 1300
- End Page
- 1304
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/14628
- DOI
- 10.1107/S0021889810036472
- ISSN
- 0021-8898
- Abstract
- The crystallographic and structural characteristics of GaN tripods and hexapods grown on c-plane sapphire substrates were investigated using synchrotron X-ray scattering and microscopic analysis. The core structure of a GaN hexapod is revealed to be in the zincblende phase with an inversion domain, and a refined crystallographic analysis of tripods and hexapods with synchrotron X-ray scattering shows the existence of the zincblende phase in wurtzite-based protruding nanorods. The atomistic model combined with this crystallographic analysis reveals that the core size of a hexapod is much smaller than the diameters of the protruding nanorods. This refined structural analysis can be utilized in tailoring the opto-electronic characteristics of GaN multipods.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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