Mapping strain gradients in the FIB-structured InGaN/GaN multilayered films with 3D X-ray microbeam
DC Field | Value | Language |
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dc.contributor.author | Barabash, R. I. | - |
dc.contributor.author | Gao, Y. F. | - |
dc.contributor.author | Ice, G. E. | - |
dc.contributor.author | Barabash, O. M. | - |
dc.contributor.author | Chung, Jin-Seok | - |
dc.contributor.author | Liu, W. | - |
dc.contributor.author | Kroeger, R. | - |
dc.contributor.author | Lohmeyer, H. | - |
dc.contributor.author | Sebald, K. | - |
dc.contributor.author | Gutowski, J. | - |
dc.contributor.author | Boettcher, T. | - |
dc.contributor.author | Hommel, D. | - |
dc.date.available | 2018-05-10T13:54:37Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2010-11-25 | - |
dc.identifier.issn | 0921-5093 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/14634 | - |
dc.description.abstract | This research presents a combined experimental-modeling study of lattice rotations and deviatoric strain gradients induced by focused-ion beam (FIB) milling in nitride heterostructures. 3D X-ray polychromatic microdiffraction (PXM) is used to map the local lattice orientation distribution in FIB-structured areas. Results are discussed in connection with microphotoluminescence (mu-PL), fluorescent analysis, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) data. It is demonstrated that FIB-milling causes both direct and indirect damage to the InGaN/GaN layers. In films subjected to direct ion beam impact, a narrow amorphidized top layer is formed. Near the milling area, FIB-induced stress relaxation and formation of complicated 3D strain fields are observed. The resulting lattice orientation changes are found to correlate with a decrease and/or loss of PL intensity, and agree well with finite element simulations of the three-dimensional strain fields near the relaxed trenches. Experimentally, it is found that the lattice surface normal has an in-plane rotation, which only appears in simulations when the GaN-substrate lattice mismatch annihilates the InGaN-substrate mismatch. This behavior further supports the notion that the film/substrate interface is incoherent. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | - |
dc.subject | DEFORMATION | - |
dc.subject | PLASTICITY | - |
dc.subject | ANISOTROPY | - |
dc.subject | STRESS | - |
dc.subject | SCALE | - |
dc.title | Mapping strain gradients in the FIB-structured InGaN/GaN multilayered films with 3D X-ray microbeam | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.msea.2010.04.045 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, v.528, no.1, pp.52 - 57 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000284788200007 | - |
dc.identifier.scopusid | 2-s2.0-77958471627 | - |
dc.citation.endPage | 57 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 52 | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | - |
dc.citation.volume | 528 | - |
dc.contributor.affiliatedAuthor | Chung, Jin-Seok | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Strain | - |
dc.subject.keywordAuthor | Nitride semiconductors | - |
dc.subject.keywordAuthor | X-ray microbeam | - |
dc.subject.keywordAuthor | Dislocations | - |
dc.subject.keywordAuthor | Lattice rotations | - |
dc.subject.keywordPlus | DEFORMATION | - |
dc.subject.keywordPlus | PLASTICITY | - |
dc.subject.keywordPlus | ANISOTROPY | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordPlus | SCALE | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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