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Photoluminescence induced by thermal annealing in SrTiO3 thin film
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rho, JaeHoon | - |
| dc.contributor.author | Jang, SeungHun | - |
| dc.contributor.author | Ko, Young Dong | - |
| dc.contributor.author | Kang, SeungJin | - |
| dc.contributor.author | Kim, Dong-Wook | - |
| dc.contributor.author | Chung, J. -S. | - |
| dc.contributor.author | Kim, Miyoung | - |
| dc.contributor.author | Han, Moonsup | - |
| dc.contributor.author | Choi, Eunjip | - |
| dc.date.available | 2018-05-10T15:14:42Z | - |
| dc.date.created | 2018-04-17 | - |
| dc.date.issued | 2009-12-14 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/15721 | - |
| dc.description.abstract | We have grown SrTiO3 thin films by rf-sputtering and studied its photoluminescence (PL) property after postannealing treatments. While the as-grown film does not show any PL signal, visible frequency PL emissions are induced by high temperature (T>550 degrees C) annealing. When subsequent low-T (50 degrees C) and long term (>8 months) annealing was made, the PL-spectra evolved into another pattern in which four distinct luminescence peaks appear simultaneously at lambda=1.8, 2.2, 2.7, and 3.1 eV. We propose that these remarkable room temperature PL effects are due to both metastable and energetically stabilized defect states formed inside the band gap. | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.subject | ROOM-TEMPERATURE | - |
| dc.title | Photoluminescence induced by thermal annealing in SrTiO3 thin film | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1063/1.3275707 | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.95, no.24 | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.wosid | 000272954900017 | - |
| dc.identifier.scopusid | 2-s2.0-77956140100 | - |
| dc.citation.number | 24 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 95 | - |
| dc.contributor.affiliatedAuthor | Chung, J. -S. | - |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | annealing | - |
| dc.subject.keywordAuthor | defect states | - |
| dc.subject.keywordAuthor | dielectric thin films | - |
| dc.subject.keywordAuthor | energy gap | - |
| dc.subject.keywordAuthor | high-temperature effects | - |
| dc.subject.keywordAuthor | permittivity | - |
| dc.subject.keywordAuthor | photoluminescence | - |
| dc.subject.keywordAuthor | sputter deposition | - |
| dc.subject.keywordAuthor | strontium compounds | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.description.journalRegisteredClass | scopus | - |
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Related Researcher
- Chung, Jin Seok
- College of Natural Sciences (Department of Physics)