Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films
DC Field | Value | Language |
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dc.contributor.author | Kim, Y. S. | - |
dc.contributor.author | Kim, J. | - |
dc.contributor.author | Moon, S. J. | - |
dc.contributor.author | Choi, W. S. | - |
dc.contributor.author | Chang, Y. J. | - |
dc.contributor.author | Yoon, J. -G. | - |
dc.contributor.author | Yu, J. | - |
dc.contributor.author | Chung, J. -S. | - |
dc.contributor.author | Noh, T. W. | - |
dc.date.available | 2018-05-10T15:19:47Z | - |
dc.date.created | 2018-04-17 | - |
dc.date.issued | 2009-05-18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/15836 | - |
dc.description.abstract | Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Y. S. Kim , Appl. Phys. Lett. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO(3) without affecting its insulating property. These results are consistent with electronic structural changes determined from optical transmission and x-ray absorption measurements. Our work suggests importance of oxygen vacancies and their complexes in understanding of electronic properties of perovskite oxide thin films, including STO. | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.subject | SRTIO3 | - |
dc.title | Localized electronic states induced by defects and possible origin of ferroelectricity in strontium titanate thin films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.3139767 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.94, no.20 | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000266342800053 | - |
dc.identifier.scopusid | 2-s2.0-65949123564 | - |
dc.citation.number | 20 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 94 | - |
dc.contributor.affiliatedAuthor | Chung, J. -S. | - |
dc.type.docType | Article | - |
dc.description.oadoiVersion | submitted | - |
dc.subject.keywordAuthor | ab initio calculations | - |
dc.subject.keywordAuthor | defect states | - |
dc.subject.keywordAuthor | energy gap | - |
dc.subject.keywordAuthor | ferroelectric materials | - |
dc.subject.keywordAuthor | ferroelectric thin films | - |
dc.subject.keywordAuthor | light transmission | - |
dc.subject.keywordAuthor | strontium compounds | - |
dc.subject.keywordAuthor | vacancies (crystal) | - |
dc.subject.keywordAuthor | X-ray absorption spectra | - |
dc.subject.keywordPlus | SRTIO3 | - |
dc.description.journalRegisteredClass | scopus | - |
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