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Magnetic and thermal properties of MoN underlayer for spin valves depending on nitrogen concentration
- Authors
- Kim, J.; Choi, Y.; Jo, S.; Kim, S. Y.; Lee, C. W.
- Issue Date
- Oct-2006
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- diffusion barrier; GMR; IrMn; MoN films; spin valve; underlayer
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.42, no.10, pp.3267 - 3269
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 42
- Number
- 10
- Start Page
- 3267
- End Page
- 3269
- ISSN
- 0018-9464
- Abstract
- We incorporated nitrogen in the Mo underlayer and investigated the effect of nitrogen concentration on the magnetic properties and annealing behavior of the spin valve devices. The spin valve structure was Si/SiO2/Mo(MoN)(35 angstrom)/NiFe(21 angstrom)/CoFe(28 angstrom)/Cu(22 A)/CoFe(18 angstrom)/IrMn(65 angstrom)/Ta(25 angstrom). It is concluded that MoN underlayer is magnetically as good as Ta underlayer for N-2 gas flow rate of less than 6 sccm.
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