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X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces
- Authors
- Song, K.M.; Kim, D.-O.; Kim, J.-S.; Lee, D.R.; Choi, J.W.
- Issue Date
- May-2018
- Publisher
- Elsevier B.V.
- Keywords
- Spintronics; Magnetic anisotropy; X-ray scattering; Electric field control of magnetism
- Citation
- Current Applied Physics, v.18, no.11, pp.1212 - 1217
- Journal Title
- Current Applied Physics
- Volume
- 18
- Number
- 11
- Start Page
- 1212
- End Page
- 1217
- ISSN
- 1567-1739
- Abstract
- The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of −12.7 fJ/Vm and −8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface. © 2018 Korean Physical Society
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Related Researcher
- Lee, Dong Ryeol
- College of Natural Sciences (Department of Physics)